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參數(shù)資料
| 型號： | 71V416S10PHGI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 10 ns, PDSO44 |
| 封裝： | 0.400 INCH, TSOP2-44 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 1397K |
| 代理商： | 71V416S10PHGI |
6.42
IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM
4 Meg (256K x 16-Bit) Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings
(1)
3
Recommended Operating
Temperature and Supply
Voltage
Recommended DC Operating
Conditions
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximumrating conditions for extended periods may affect reliability.
NOTES:
1. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle.
2. VIL (mn.) = –2V for pulse width less than 5ns, once per cycle.
Truth Table
(1)
NOTE:
1. H = V
IH
, L = V
IL
, X = Don't care.
Symbol
Rating
Value
Unit
V
DD
Supply Voltage Relative to V
SS
-0.5 to +4.6
V
V
IN,
V
OUT
Terminal Voltage Relative to
V
SS
-0.5 to V
DD
+0.5
V
T
BIAS
Temperature Under Bias
-55 to +125
o
C
T
STG
Storage Temperature
-55 to +125
o
C
P
T
Power Dissipation
1
W
I
OUT
DC Output Current
50
mA
3624 tbl 04
Grade
Temperature
V
SS
V
DD
Commercial
0
O
C to +70
O
C
0V
See Below
Industrial
–40
O
C to +85
O
C
0V
See Below
3624 tbl 05
Symbol
Parameter
Mn.
Typ.
Max.
Unit
V
DD
Supply Voltage
3.0
3.3
3.6
V
V
SS
Ground
0
0
0
V
V
IH
Input High Voltage
2.0
____
V
DD
+0.3
(1)
V
V
IL
Input Low Voltage
-0.3
(2)
____
0.8
V
3624 tbl 06
CS
OE
WE
BLE
BHE
I/O
0-
I/O
7
I/O
8-
I/O
15
Function
H
X
X
X
X
High-Z
High-Z
Deselected - Standby
L
L
H
L
H
DATA
OUT
High-Z
Low Byte Read
L
L
H
H
L
High-Z
DATA
OUT
High Byte Read
L
L
H
L
L
DATA
OUT
DATA
OUT
Word Read
L
X
L
L
L
DATA
IN
DATA
IN
Word Write
L
X
L
L
H
DATA
IN
High-Z
Low Byte Write
L
X
L
H
L
High-Z
DATA
IN
High Byte Write
L
H
H
X
X
High-Z
High-Z
Outputs Disabled
L
X
X
H
H
High-Z
High-Z
Outputs Disabled
3624 tbl 03
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 71V416S10PHGI8 | 功能描述:靜態(tài)隨機存取存儲器 256Kx16 ASYNCHRONOUS 3.3V CMOS 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V416S10PHI | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin TSOP-II Tube |
| 71V416S10YG | 功能描述:靜態(tài)隨機存取存儲器 256Kx16 ASYNCHRONOUS 3.3V CMOS 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V416S10YG8 | 功能描述:靜態(tài)隨機存取存儲器 256Kx16 ASYNCHRONOUS 3.3V CMOS 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V416S10YGI | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin SOJ Tube/Tray 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 256KX16 10NS 44PIN SOJ - Rail/Tube 制造商:Integrated Device Technology Inc 功能描述:256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM |
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