參數(shù)資料
型號(hào)： 5962F9671201VXC
廠(chǎng)商： INTERSIL CORP
元件分類(lèi)： 門(mén)電路
英文描述： Radiation Hardened Hex Inverter
中文描述： ACT SERIES, HEX 1-INPUT INVERT GATE, CDFP14
封裝： CERAMIC, DFP-14
文件頁(yè)數(shù)： 6/23頁(yè)
文件大小： 187K
代理商： 5962F9671201VXC
STANDARD
MICROCIRCUIT DRAWING
SIZE
A
5962-96712
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
D
SHEET
14
DSCC FORM 2234
APR 97
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
b.
TA = +125°C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table IIA herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in table IA at TA = +25°C ±5°C,
after exposure, to the subgroups specified in table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A and as specified herein.
4.4.4.1.1 Accelerated annealing test. Accelerated annealing tests shall be performed on all devices requiring a RHA level
greater than 5k rads (Si). The post-anneal end-point electrical parameter limits shall be as specified in table IA herein and shall
be the pre-irradiation end-point electrical parameter limit at 25
°C ±5°C. Testing shall be performed at initial qualification and
after any design or process changes which may affect the RHA response of the device.
4.4.4.2 Dose rate induced latchup testing. When required by the customer, dose rate induced latchup testing shall be
performed in accordance with method 1020 of MIL-STD-883 and as specified herein. Tests shall be performed on devices,
SEC, or approved test structures at technology qualification and after any design or process changes which may affect the RHA
capability of the process.
4.4.4.3 Dose rate upset testing. When required by the customer, dose rate upset testing shall be performed in accordance
with method 1021 of MIL-STD-883 and herein.
a. Transient dose rate upset testing shall be performed at initial qualification and after any design or process changes
which may effect the RHA performance of the devices. Test 10 devices with 0 defects unless otherwise specified.
b. Transient dose rate upset testing for class Q and V devices shall be performed as specified by a TRB approved
radiation hardness assurance plan and MIL-PRF-38535. Device parameters that influence upset immunity shall be
monitored at the wafer level in accordance with the wafer level hardness assurance plan and MIL-PRF-38535.
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