參數(shù)資料
型號(hào): 32170
廠(chǎng)商: Mitsubishi Electric Corporation
英文描述: SINGLE-CHIP 32-BIT CMOS MICROCOMPUTER
中文描述: 單芯片32位CMOS微機(jī)
文件頁(yè)數(shù): 21/49頁(yè)
文件大?。?/td> 561K
代理商: 32170
Mitsubishi Microcomputers
21
SINGLE-CHIP 32-BIT CMOS MICROCOMPUTER
2001-5-14 Rev.1.0
32170 Group, 32174 Group
Built-in Flash Memory and RAM
32170 and 32174 Group contain Flash Memory and RAM
stated as follows.
The internal flash memory can be programmed on-board
(i.e., while being mounted on the printed circuit board). This
means that the same chip as will be used in mass-produc-
tion can be used directly from the development stage on,
allowing for system development without having to change
the printed circuit board when proceeding from trial produc-
tion to mass-production.
Table 10 Flash memory and RAM Size (32170 Group)
Type Name
ROM Size
RAM Size
M32170F6VFP
768K bytes
40K bytes
M32170F4VFP
512K bytes
32K bytes
M32170F3VFP
384K bytes
32K bytes
M32170F6VWG
768K bytes
40K bytes
M32170F4VWG
512K bytes
32K bytes
M32170F3VWG
384K bytes
32K bytes
Table 11 Flash memory and RAM Size (32174 Group)
Type Name
ROM Size
RAM Size
M32174F4VFP
512K bytes
40K bytes
M32174F3VFP
384K bytes
40K bytes
M32174F4VWG
512K bytes
40K bytes
M32174F3VWG
384K bytes
40K bytes
Built-in Virtual-flash Emulation Function
Internal flash memory, which is divided from the first address
in units of 8 Kbyte (L banks), can be replaced in 8 -Kbyte
blocks (H70080 4000-H’0080 5FFF) of the internal RAM.
And also the internal flash memory, which is divided from the
first address in units of 4-Kbyte areas (S banks), can be re-
placed in 4 Kbytes areas.
This function allows parts of the program which are fre-
quently changed during development to be altered or evalu-
ated without having to reset the microcomputer each time.
What’s more, when combined with the realtime debugger,
this function helps to reduce the program evaluation period,
because data in the RAM can be rewritten without requiring
any CPU load.
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