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參數(shù)資料
| 型號： | 2SK663 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | For Low-Frequency Amplification |
| 中文描述： | 30 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 73K |
| 代理商： | 2SK663 |
253
Silicon Junction FETs (Small Signal)
2SK0663
(2SK663)
Silicon N-Channel Junction FET
unit: mm
For low-frequency amplification
For switching
I
Features
G
Low noise-figure (NF)
G
High gate to drain voltage V
GDO
G
S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
I
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Symbol
V
DSX
V
GDO
V
GSO
I
D
I
G
P
D
T
j
T
stg
Ratings
55
55
55
30
10
150
125
55 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
I
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Mutual conductance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
Symbol
I
DSS*
I
GSS
V
GDS
V
GSC
g
m
C
iss
C
rss
NF
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
=
30V, V
DS
= 0
I
G
= 100
μ
A, V
DS
= 0
V
DS
= 10V, I
D
= 10
μ
A
V
DS
= 10V, I
D
= 5mA, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, R
g
= 100k
f = 100Hz
min
1
55
2.5
max
12
10
5
Unit
mA
nA
V
V
mS
pF
pF
dB
typ
80
7.5
6.5
1.9
2.5
Marking Symbol (Example): 2B
*
I
DSS
rank classification
Runk
I
DSS
(mA)
Marking Symbol
P
1 to 3
2BP
Q
2 to 6.5
2BQ
R
5 to 12
2BR
1: Source
2: Drain
3: Gate
EIAJ: SC-70
SMini3-G1 Package
2
±
1.3
±0.1
0.3
+0.1
2.0
±0.2
1
±
(
1
3
2
(0.65) (0.65)
0
±
0
±
0
0
+
–
0.15
+0.10
5
°
10
°
Note) The part number in the parenthesis shows conventional part number.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK664 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Switching |
| 2SK665 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK666 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 4V V(BR)DSS | 150MA I(D) | MICRO-X |
| 2SK669 | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH.HF 50V 0.1A SPA |
| 2SK669-AC | 功能描述:MOSFET N-CH 50V 100MA 3SPA RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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