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參數資料
| 型號： | 2SK664 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | For Switching |
| 中文描述： | 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 76K |
| 代理商： | 2SK664 |
289
Silicon MOS FETs (Small Signal)
2SK0664
(2SK664)
Silicon N-Channel MOS FET
For switching
I
Features
G
High-speed switching
G
S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
I
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
8
100
200
150
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
I
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
C
iss
C
oss
C
rss
t
on*
t
off*
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100
μ
A, V
GS
= 0
I
D
= 100
μ
A, V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DS
= 5V, V
GS
= 0, f = 1kHz
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200
*
t
on
, t
off
measurement circuit
min
50
1.5
20
typ
10
20
Unit
μ
A
μ
A
V
V
mS
pF
pF
pF
ns
ns
max
10
50
3.5
50
15
5
1
Marking Symbol: 3N
Internal Connection
G
D
S
1: Gate
2: Source
3: Drain
EIAJ: SC-70
SMini3-G1 Package
2
±
1.3
±0.1
0.3
+0.1
–
0.0
2.0
±0.2
1
±
(
1
3
2
(0.65) (0.65)
0
±
0
±
0
0
+
–
0
0.15
+0.05
–
5
°
10
°
V
out
V
DD
= 5V
V
GS
= 5V
50
200
1
μ
F
V
in
90%
10%
10%
90%
V
out
t
on
t
off
unit: mm
Note) The part number in the parenthesis shows conventional part number.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK665 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK666 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 4V V(BR)DSS | 150MA I(D) | MICRO-X |
| 2SK669 | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH.HF 50V 0.1A SPA |
| 2SK669-AC | 功能描述:MOSFET N-CH 50V 100MA 3SPA RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK672 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-220AB |
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