參數(shù)資料
型號(hào): 2SK3775-01
廠商: FUJI ELECTRIC CO LTD
元件分類: JFETs
英文描述: N-CHANNEL SILICON POWER MOSFET
中文描述: 2.4 A, 300 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 3/4頁
文件大?。?/td> 93K
代理商: 2SK3775-01
3
2SK3775-01
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0.0
0.1
0.2
0.3
0.4
0.5
R
Tch [
°
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=16A,VGS=10V
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
μ
A
V
Tch [
°
C]
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=32A,Tch=25
°
C
240V
150V
Vcc= 60V
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
10
4
C
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
VSD [V]
1.00
1.25
1.50
0.1
1
10
100
I
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
μ
s pulse test,Tch=25
°
C
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=180V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t
ID [A]
相關(guān)PDF資料
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