參數(shù)資料
型號(hào): 2SK3752-01R
廠商: Electronic Theatre Controls, Inc.
英文描述: N-CHANNEL SILICON POWER MOSFET
中文描述: N溝道功率MOSFET硅
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 121K
代理商: 2SK3752-01R
2
Characteristics
2SK3752-01R
FUJI POWER MOSFET
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
90
100
Allowable Power Dissipation
PD=f(Tc)
P
Tc [
°
C]
0
2
4
6
8
10
VDS [V]
12
14
16
18
20
22
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
20V
10V
8V
7.5V
7.0V
I
Typical Output Characteristics
ID=f(VDS):80
μ
s pulse test,Tch=25
°
C
VGS=6.5V
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
I
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80
μ
s pulse test,VDS=25V,Tch=25
°
C
0.1
1
10
0.1
1
10
100
g
ID [A]
Typical Transconductance
gfs=f(ID):80
μ
s pulse test,VDS=25V,Tch=25
°
C
0
5
10
15
ID [A]
20
25
30
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
R
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
μ
s pulse test,Tch=25
°
C
10V
20V
8V
7.5V
7.0V
VGS=6.5V
-50
-25
0
25
50
75
100
125
150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
R
Tch [
°
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=7A,VGS=10V
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