參數(shù)資料
型號(hào): 2SK3677-01MR
廠商: FUJI ELECTRIC CO LTD
元件分類: JFETs
英文描述: N-CHANNEL SILICON POWER MOSFET
中文描述: 12 A, 700 V, 0.93 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220F, 3 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 122K
代理商: 2SK3677-01MR
2
Characteristics
2SK3677-01MR
FUJI POWER MOSFET
0
25
50
75
100
125
150
0
20
40
60
80
100
120
Allowable Power Dissipation
PD=f(Tc)
P
Tc [
°
C]
0
5
10
15
20
25
0
5
10
15
20
20V
7.0V
10V
8.0V
6.5V
6.0V
I
VDS [V]
Typical Output Characteristics
ID=f(VDS):80
μ
s pulse test,Tch=25
°
C
VGS=5.5V
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
I
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80
μ
s pulse test,VDS=25V,Tch=25
°
C
0.1
1
10
1
10
100
g
ID [A]
Typical Transconductance
gfs=f(ID):80
μ
s pulse test,VDS=25V,Tch=25
°
C
0
5
10
ID [A]
15
20
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
7.0V
6.5V
R
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
μ
s pulse test,Tch=25
°
C
10V
20V
8.0V
6.0V
VGS=5.5V
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
R
Tch [
°
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6A,VGS=10V
相關(guān)PDF資料
PDF描述
2SK3679-01MR STD LQg MOSFET
2SK3679 Fuji Power MOSFET SuperFAP-G series Target Specification
2SK367 N CHANNEL JUNCTION TYPE FOR AUDIO, HIGH VOLTAGE AMPLIFIER AND CONSTANT CURRENT APPLICATIONS)
2SK3683 Fuji Power MOSFET SuperFAP-G series Target Specification
2SK3683-01MR Fuji Power MOSFET SuperFAP-G series Target Specification
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3677-01MRSC-P 制造商:Fuji Electric 功能描述:
2SK3678-01 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 900V;RDS(ON) 1.22 Ohms;ID +/-9A;TO-220AB;PD 270W;VGS +/-
2SK3678-01SC 制造商:Fuji Electric 功能描述:
2SK3679-01MRSC-P 制造商:Fuji Electric 功能描述:
2SK3680-01 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.09Ohm;ID +/-52A;TO-247;PD 600W;VGS +/-30V 制造商:Fuji Electric 功能描述:MOSFET N TO-247