參數(shù)資料
型號(hào)： 2SK3662
廠商： Toshiba Corporation
元件分類： 基準(zhǔn)電壓源/電流源
英文描述： RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
中文描述： 抗輻射高效，5安培開關(guān)穩(wěn)壓器
文件頁數(shù)： 2/6頁
文件大?。?/td> 223K
代理商： 2SK3662
2SK3662
2003-01-16
2
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
16 V, V
DS
0 V
10
A
Drain cut-off current
I
DSS
V
DS
60 V, V
GS
0 V
100
A
V
(BR) DSS
I
D
10 mA, V
GS
0 V
60
Drain-source breakdown voltage
V
(BR) DSX
I
D
10 mA, V
GS
20 V
40
V
Gate threshold voltage
V
th
V
DS
10 V, I
D
1 mA
1.3
2.5
V
V
GS
4 V, ID 18 A
12.5
19
Drain-source ON resistance
R
DS (ON)
V
GS
10 V, I
D
18 A
9.4
12.5
m
Forward transfer admittance
|Y
fs
|
V
DS
10 V, I
D
18 A
28
55
S
Input capacitance
C
iss
5120
Reverse transfer capacitance
C
rss
300
Output capacitance
C
oss
V
DS
10 V, V
GS
0 V, f 1 MHz
500
pF
Rise time
t
r
6
Turn-on time
t
on
19
Fall time
t
f
20
Switching time
Turn-off time
t
off
Duty
≤
1%, t
w
10 s
115
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
91
Gate-source charge
Q
gs
70
Gate-drain (“miller”) charge
Q
gd
V
DD
≈
48 V, V
GS
10 V,
I
D
35 A
21
nC
Source-Drain Diode Ratings and Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
I
DR
35
A
(Note 1)
I
DRP
105
A
V
DS2F
t
rr
Q
rr
I
DR1
35 A, V
GS
0 V
I
DR
35 A, V
GS
0 V,
dI
DR
/dt 50 A/ s
1.5
V
ns
nC
60
58
Marking
0 V
10
V
V
GS
R
L
V
DD
≈
30 V
I
D
18
A
V
OUT
4
※
Type
K3662
※
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3662(F) 制造商:Toshiba 功能描述:Nch 60V 35A 0.0125@10V TO220NIS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 60V 35A TO220NIS
2SK3663-T1-A 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-70 T/R Tape & Reel 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,20V,0.5A,0.38ohm,SSP3 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-70 T/R
2SK3664-T1-A 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-75 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,20V,0.5A,0.38ohm,USM3 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-75 T/R
2SK3666-2-TB-E 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3666-3-TB-E 功能描述:JFET SWITCHING DEVICE RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
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