參數(shù)資料
型號： 2SK3596-01SJ
廠商： FUJI ELECTRIC CO LTD
元件分類： JFETs
英文描述： N-CHANNEL SILICON POWER MOSFET
中文描述： 30 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 4/4頁
文件大?。?/td> 129K
代理商： 2SK3596-01SJ
4
2SK3596-01L,S,SJ
FUJI POWER MOSFET
I
AV
=f(t
AV
):starting Tch=25°C. Vcc=48V
A
A
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
Maximum Avalanche Current Pulsewidth
t
AV
[sec]
GATE
DRAIN
SOURCE
See Note: 1.
Trademark
Lot No.
DIMENSIONS ARE IN MILLIMETERS.
Type name
FUJI POWER MOS FET
CONNECTION
Notes
1. ( ) : Reference dimensions.
2. the solder plating, part of cutting
is without the solder plating.
Note: 1. avalanche ruggedness.
Pre-Solder
Fig. 1.
Fig. 1.
OUT VIEW
Solder Plating
1
2
3
4
GATE
DRAIN
SOURCE
See Note: 1.
Trademark
Lot No.
Type name
FUJI POWER MOS FET
CONNECTION
Notes
1. ( ) : Reference dimensions.
2. the solder plating, part of cutting
is without the solder plating.
Note: 1.avalanche ruggedness.
OUT VIEW
Fig. 1.
Fig. 1.
Solder Plating
Pre-Solder
DIMENSIONS ARE IN MILLIMETERS.
2
4
1
3
PRE-SOLDER
See Note: 1.
Trademark
Lot No.
Type name
Note: 1. Guaranteed mark of avalanche ruggedness.
CONNECTION
GATE
DRAIN
SOURCE
DIMENSIONS ARE IN MILLIMETERS.
FUJI POWER MOS FET
1
2
3
Outline Drawings (mm)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Z
t [sec]
相關(guān)PDF資料
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