參數(shù)資料
型號(hào): 2SK3579-01MR
廠商: FUJI ELECTRIC CO LTD
元件分類: JFETs
英文描述: N-CHANNEL SILICON POWER MOSFET
中文描述: 23 A, 150 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
封裝: TO-220F, 3 PIN
文件頁數(shù): 3/4頁
文件大小: 121K
代理商: 2SK3579-01MR
3
2SK3579-01MR
FUJI POWER MOSFET
VGS=f(Qg):ID=23A, Tch=25°C
IF=f(VSD):80μs Pulse test,Tch=25°C
t=f(ID):Vcc=48V, VGS=10V, RG=10
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
V
Tch [
°
C]
0
10
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
12
14
16
18
20
22
24
Qg [nC]
Typical Gate Charge Characteristics
Vcc= 48V
10
-1
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
C
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0.1
1
10
100
VGS=10V
VGS=0V
I
VSD [V]
Typical Forward Characteristics of Reverse Diode
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t
ID [A]
0
25
50
75
100
125
150
0
50
100
150
200
250
300
starting Tch [
°
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=23A
相關(guān)PDF資料
PDF描述
2SK357 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
2SK3581-01L N-CHANNEL SILICON POWER MOSFET
2SK3581-01SJ N-CHANNEL SILICON POWER MOSFET
2SK3586 N CHANNEL SILICON POWER MOSFET
2SK3586-01 N CHANNEL SILICON POWER MOSFET
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