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參數(shù)資料
| 型號(hào)： | 2SK3576 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 中文描述： | N溝道MOS場(chǎng)效應(yīng)晶體管高速開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | 2SK3576 |
Data Sheet D15939EJ1V0DS
3
2SK3576
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
d
0
20
40
60
80
100
120
0
20
40
60
80
100
120
140
160
P
T
0
0.25
0.5
0.75
1
1.25
1.5
0
20
40
60
80
100
120
140
160
T
A
- Ambient Temperature -
°
C
T
A
- Ambient Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
I
D
0.01
0.1
1
10
100
0.1
1
10
100
PW = 1 ms
100 ms
10 ms
I
D(pulse)
I
D(DC)
5 s
R
DS(on)
Limited
(V
GS
= 4.5 V)
Single Pulse
Mounted on FR-4 board of
50 mm × 50 mm × 1.6 mm
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
°
C
1
10
100
1000
Without board
Single Pulse
Mounted on FR-4 board of
50 mm × 50 mm × 1.6 mm
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3577 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SK359 | Silicon N-Channel MOS FET |
| 2SK360 | Silicon N-Channel MOS FET |
| 2SK3635-Z | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3635 | SWITCHING N-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3576-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3576-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 4A 3-Pin Thin-Type Mini-Mold T/R |
| 2SK3576-T1B-AT | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3577-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 3.5A 3-Pin SC-59 |
| 2SK358 | 制造商:Toshiba 功能描述:Bulk |
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