- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370115 > 2SK3576 (NEC Corp.) N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PDF資料下載
參數(shù)資料
| 型號： | 2SK3576 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管高速開關(guān) |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 66K |
| 代理商： | 2SK3576 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2001
MOS FIELD EFFECT TRANSISTOR
2SK3576
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
Date Published
Printed in Japan
D15939EJ1V0DS00 (1st edition)
May 2002 NS CP(K)
DESCRIPTION
The 2SK3576 is a switching device which can be driven
directly by a 2.5 V power source.
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
2.5V drive available
Low on-state resistance
R
DS(on)1
= 50 m
MAX. (V
GS
= 4.5
V, I
D
= 2.0
A)
R
DS(on)2
= 53 m
MAX. (V
GS
= 4.0
V, I
D
= 2.0 A)
R
DS(on)3
= 75 m
MAX. (V
GS
= 2.5
V, I
D
= 2.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3576
SC-96 (Mini Mold Thin Type)
Marking: XK
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
±12
±4.0
±16
0.2
1.25
150
V
V
A
A
W
W
°C
°C
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Note2
Channel Temperature
Storage Temperature
–55 to +150
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 board, t
≤
5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
2
1
0.95
1
2
3
1.9
2.9 ±0.2
0.4
+0.1
0.95
0
+
–
1
: Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3577 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SK359 | Silicon N-Channel MOS FET |
| 2SK360 | Silicon N-Channel MOS FET |
| 2SK3635-Z | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3635 | SWITCHING N-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3576-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3576-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 4A 3-Pin Thin-Type Mini-Mold T/R |
| 2SK3576-T1B-AT | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3577-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 3.5A 3-Pin SC-59 |
| 2SK358 | 制造商:Toshiba 功能描述:Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。