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參數(shù)資料
| 型號： | 2SK3563 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS?) |
| 中文描述： | 東芝場效應(yīng)晶體管硅?頻道馬鞍山類型（餅馬鞍山？） |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 348K |
| 代理商： | 2SK3563 |
2SK3563
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
25 V, V
DS
=
0 V
±
10
μ
A
Gate-source breakdown voltage
V
(BR) GSS
I
D
=
±
10
μ
A, V
GS
=
0 V
±
30
V
Drain cut-off current
I
DSS
V
DS
=
500 V, V
GS
=
0 V
100
μ
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
500
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
1 mA
2.0
4.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
=
10 V, I
D
=
2.5 A
1.35
1.50
Forward transfer admittance
Y
fs
V
DS
=
10 V, I
D
=
2.5 A
1.5
3.5
S
Input capacitance
C
iss
550
Reverse transfer capacitance
C
rss
7
Output capacitance
C
oss
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
70
pF
Rise time
t
r
10
Turn-on time
t
on
20
Fall time
t
f
10
Switching time
Turn-off time
t
off
50
ns
Total gate charge
Q
g
16
Gate-source charge
Q
gs
10
Gate-drain charge
Q
gd
V
DD
～
400 V, V
GS
=
10 V, I
D
= 5
A
6
nC
R
L
=
90
～
<
Duty
1%, t
w
=
10
μ
s
15
V
OUT
I
D
=
2.5
A
V
DD
225 V
0 V
10
V
V
GS
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
I
DR
5
A
Pulse drain reverse current
(Note 1)
I
DRP
20
A
Forward voltage (diode)
V
DSF
I
DR
=
5 A, V
GS
=
0 V
1.7
V
Reverse recovery time
t
rr
1400
ns
Reverse recovery charge
Q
rr
I
DR
=
5 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/
μ
s
9
μ
C
Marking
※
Lot Number
Month (Starting from Alphabet A)
Year (Last Number of the Christian Era)
K3563
TYPE
※
2003-01-27
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3564 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4) |
| 2SK3565 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS?) |
| 2SK3567 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI) |
| 2SK3569 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI) |
| 2SK3579-01MR | N-CHANNEL SILICON POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3563(Q) | 功能描述:MOSFET N-Ch 500V 5A Rdson 1.5 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3563(STA4,Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 500V 5A 3-Pin (3+Tab) TO-220SIS Cut Tape |
| 2SK3564 | 功能描述:MOSFET N-Ch 900V 3A Rdson 4.3 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3564(Q) | 功能描述:MOSFET N-Ch 900V 3A Rdson 4.3 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3564(STA4,Q,M) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 3A TO-220SIS 制造商:Toshiba 功能描述:TRANSISTOR |
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