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參數(shù)資料
| 型號： | 2SK3523-01R |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | POWER MOSFET |
| 中文描述： | 25 A, 500 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數(shù)： | 9/19頁 |
| 文件大小： | 356K |
| 代理商： | 2SK3523-01R |
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H04-004-03
Fuji Electric Co.,Ltd.
MS5F5173
9 / 19
9 Warning
9.1. Although Fuji Electric is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you
are requested to take adequate safety measures to prevent the equipment from causing a physical
injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design fail-safe, flame retardant, and free of malfunction.
9.2. The products introduced in this Specification are intended for use in the following electronic and
electrical equipment witch has normal reliability requirements.
Computers OA equipments
Communications equipment (Terminal devices)
Measurement equipments
Machine tools
Electrical home appliances
Personal equipments
9.3. If you need to use a product in this Specification for equipment requiring higher reliability than normal,
such as for the equipment listed below, it is imperative to contact Fuji Electric to obtain prior approval.
When using these products for such equipment, take adequate measures such as a backup system to
prevent the equipment from malfunctioning even if a Fuji’s product incorporated in the equipment
becomes faulty.
Transportation equipment (Automotives, Locomotives and ships etc…)
Backbone network equipment
Traffic-signal control equipment
Gas alarm, Leakage gas auto breaker
Burglar alarm, Fire alarm, Emergency equipments etc…
9.4. Don’t use products in this Specification for the equipment requiring strict reliability such as
(without limitation)
Aerospace equipment
Aeronautic equipment
Medical equipment
Submarine repeater equipment
10. General Notice
10.1. Preventing ESD Damage
Although the gate oxide of Fuji Power MOSFETs is much higher ruggedness to ESD damage than
small-Signal MOSFETs and CMOS ICs, careful handling of any MOS devices are an important
consideration.
1) When handling MOSFETs, hold them by the case (package) and don’t touch the leads and
terminals.
2) It is recommended that any handling of MOSFETs is done while used
electrically conductive floor and
tablemats that are grounded.
3) Before touching a MOSFETs terminal, discharge any static electricity from your body and clothes by
grounding out through a high impedance resistor (about 1M
)
4) When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron or
soldering bath through a low impedance resistor.
AV equipments
Industrial robots
etc…
nuclear control equipment
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3524 | N-CHANNE SILLCON POWER MOSFET |
| 2SK3524-01 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK3525-01MR | XTAL CER SMT 6X3.5 2PAD |
| 2SK3525 | N CHANNEL SILICON POWER MOSFET |
| 2SK3526-01SJ | N-CHANNEL SILICON POWER MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3523-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3524-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.93Ohm;ID +/-8A;TO-220AB;PD 135W;VGS +/-30 |
| 2SK3525 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK3525-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3527-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.29Ohm;ID +/-21A;TO-247;PD 335W;VGS +/-30V |
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