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參數(shù)資料
| 型號： | 2SK3523-01R |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | POWER MOSFET |
| 中文描述： | 25 A, 500 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數(shù)： | 10/19頁 |
| 文件大?。?/td> | 356K |
| 代理商： | 2SK3523-01R |
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Fuji Electric Co.,Ltd.
MS5F5173
10 / 19
10.2. Short mode failure / Open mode failure
The MOSFETs may be in the risk of having short mode failure or open mode failure when the applied over
voltage, over current or over temperature each specified maximum rating. It is recommended to use the
fail-safe equipment or circuit from such possible failures.
10.3. An Electric shock / A Skin burn
You may be in risk for an Electric shock or a Skin burn for directly touching to the leads or package of the
MOSFETs while turning on electricity or operating.
10.4. Smoke / Fire
Fuji MOSFETs are made of incombustibility material. However, a failure of the MOSFETs may emit
smoke or fire. Also, operating the MOSFETs near any flammable place or material may risk the
10.5. Corrosion / Erosion
Avoid use or storage of the MOSFETs under the higher humidity, corrosive gases. It will lead the device
to corrode and possibly cause the device to fail.
10.6. Radiation field
Don’t use of the device under the radiation field since the device is not designed for radiation proofing.
11. Notes for Design
11.1. You must design the MOSFETs to be operated within specified maximum ratings (Voltage, Current,
Temperature etc…) which are imperative to prevent possible failure or destruction of the device.
11.2. We recommend to use the protection equipment or safety equipment such as fuse, breaker to prevent
the fire or damage in case of unexpected accident may have occurred.
11.3. You must design the MOSFETs within it’s reliability and lifetime in certain the environment or condition.
There is a risk that MOSFETs breakdown earlier than the target lifetime of the your products when
MOSFETs was used in the reliability condition excessively. Especially avoid use of the MOSFETs
under the higher humidity, corrosive gases.
11.4. We recommend to consider for the temperature rise not only for the Channel but also for the Leads if it
designed to large current operation to the MOSFETs.
11.5. We only guarantee the non-repetitive and repetitive Avalanche capability and not for the continuous
Avalanche capability which can be assumed as abnormal condition. Please note the device may be
destructed from the Avalanche over the specified maximum rating.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3524 | N-CHANNE SILLCON POWER MOSFET |
| 2SK3524-01 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK3525-01MR | XTAL CER SMT 6X3.5 2PAD |
| 2SK3525 | N CHANNEL SILICON POWER MOSFET |
| 2SK3526-01SJ | N-CHANNEL SILICON POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3523-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3524-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.93Ohm;ID +/-8A;TO-220AB;PD 135W;VGS +/-30 |
| 2SK3525 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK3525-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3527-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.29Ohm;ID +/-21A;TO-247;PD 335W;VGS +/-30V |
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