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參數(shù)資料
| 型號(hào)： | 2SK3233 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 2SK3233 |
2SK3233
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
500
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source leak current
I
GSS
I
DSS
V
GS(off)
R
DS(on)
—
—
±
0.1
μ
A
μ
A
V
GS
=
±
30 V, V
DS
= 0
V
DS
= 500 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 2.5 A, V
GS
= 10 V
Note4
Zero gate voltage drain current
—
—
1
Gate to source cutoff voltage
3.0
—
4.0
V
Static drain to source on state
resistance
—
1.1
1.5
Forward transfer admittance
|y
fs
|
Ciss
3.0
4.5
—
S
I
D
= 2.5 A, V
DS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Input capacitance
—
580
—
pF
Output capacitance
Coss
—
70
—
pF
Reverse transfer capacitance
Crss
—
13
—
pF
Turn-on delay time
td(on)
—
20
—
ns
I
D
= 2.5 A
V
GS
= 10 V
R
L
= 100
Rg = 10
Rise time
tr
—
15
—
ns
Turn-off delay time
td(off)
—
65
—
ns
Fall time
tf
—
15
—
ns
Total gate charge
Qg
—
15
—
nC
V
DD
= 400 V
V
GS
= 10 V
I
D
= 5 A
I
F
= 5 A, V
GS
= 0
Gate to source charge
Qgs
—
3
—
nC
Gate to drain charge
Qgd
—
8
—
nC
Body-drain diode forward
voltage
V
DF
—
0.85
1.3
V
Body-drain diode reverse
recovery time
trr
—
400
—
ns
I
F
= 5 A, V
GS
= 0
Body-drain diode reverse
recovery charge
Note:
4. Pulse test
Qrr
—
1.5
—
μ
C
diF/dt = 100 A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3233(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3234 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:2SK3234 |
| 2SK3234(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3235 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK3235-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-3P 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-3P Cut Tape |
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