參數(shù)資料
型號(hào): 2SK2978
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān)
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 45K
代理商: 2SK2978
2SK2978
5
0.1
0.2
0.5
1
2
5
10
0
5
10
15
20
25
30
1000
100
300
50
40
30
20
10
0
20
16
12
8
4
4
8
12
16
20
0
1000
100
200
20
10
0.1
0.2
2
10
100
20
50
10
10
3
1
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
Drain Current I (A)
S
Switching Characteristics
1
V = 0
f = 1 MHz
Ciss
Coss
Crss
I = 2.5 A
V
GS
V
DS
0.5
5
500
50
V = 10 V
5 V
V = 10 V
5 V
r
d(off)
t
tf
d(on)
t
V = 4 V, V = 10 V
PW = 5 μs, duty < 1 %
di / dt = 50 A / μs
V = 0, Ta = 25 °C
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2SK2980 Silicon N Channel MOS FET High Speed Power Switching
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