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參數(shù)資料
| 型號(hào)： | 2SK2978 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2SK2978 |
2SK2978
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
20
V
Gate to source voltage
±
10
V
Drain current
2.5
A
Drain peak current
Note1
5
A
Body-drain diode reverse drain current I
DR
Channel dissipation
2.5
A
Pch
Note2
1
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm)
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Zero gate voltege drain current
20
—
—
V
I
D
= 10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
DS
= 20 V, V
GS
= 0
V
GS
=
±
8V, V
DS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 1.5A, V
GS
= 4V
Note3
±
10
—
—
V
I
DSS
I
GSS
V
GS(off)
R
DS(on)
—
—
10
μ
A
μ
A
Gate to source leak current
—
—
±
10
Gate to source cutoff voltage
0.5
—
1.5
V
Static drain to source on state
resistance
—
0.09
0.12
Static drain to source on state
resistance
R
DS(on)
—
0.12
0.20
I
D
= 1.5A, V
GS
= 2.5V
Note3
Forward transfer admittance
|y
fs
|
Ciss
3.0
5.0
—
S
I
D
= 1.5A, V
DS
= 10V
Note3
V
DS
= 10V
V
GS
= 0
f = 1MHz
Input capacitance
—
260
—
pF
Output capacitance
Coss
—
150
—
pF
Reverse transfer capacitance
Crss
—
75
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
15
—
ns
V
GS
= 4V, I
D
= 1.5A
R
L
= 6.67
Rise time
—
70
—
ns
Turn-off delay time
—
55
—
ns
Fall time
—
70
—
ns
Body–drain diode forward voltage
—
0.9
—
V
I
F
= 2.5A, V
GS
= 0
I
= 2.5A, V
GS
= 0
diF/ dt =50A/
μ
s
Body–drain diode reverse
recovery time
Note:
3. Pulse test
4. Marking is “ZY”
—
75
—
ns
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