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參數(shù)資料
| 型號(hào)： | 2SK2724 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 83K |
| 代理商： | 2SK2724 |
2SK2724
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
t
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
|
f
|
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
D
0
10
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
I
D
- Drain Current - A
R
D
20
1
10
0.001
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1 000
10
V
= 10 V
Pulsed
1
10
10
100
1 000
100
1 000
20
20
30
Pulsed
40
10
100
Pulsed
0
1.0
V
DS
= 10 V
I
D
= 1 mA
–50
0
50
100
150
0
1
Single Pulse
40
60
2.0
60
V
GS
= 4 V
V
GS
= 10 V
T
ch
= –25 C
25 C
75 C
125 C
R
th(ch-c)
= 4.2 C/W
R
th(ch-a)
= 62.5 C/W
80
I
D
= 18 A
1.5
0.5
μ
100
μ
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| 2SK2727 | Silicon N Channel MOS FET High Speed Power Switching |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2724-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK2725(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2726(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK2727(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2729(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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