參數(shù)資料
型號(hào): 2SK2724
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 83K
代理商: 2SK2724
1996
DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SK2724
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low On-Resistance
R
DS(on)1
= 27 m
Max. (V
GS
= 10 V, I
D
= 18 A)
R
DS(on)2
= 40 m
Max. (V
GS
= 4 V, I
D
= 18 A)
Low C
iss
C
iss
=1 200 pF Typ.
Built-in G-S Protection Diode
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
*
Total Power Dissipation (T
A
= 25 C)
Total Power Dissipation (T
C
= 25 C)
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
60
±
20
±
35
±
140
2.0
30
150
V
V
A
A
W
W
C
C
–55 to +150
*
PW
10
μ
s, duty cycle
1 %
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if voltage exceeding the rated voltage may
be applied to this device.
Document No. D10515EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in millimeter)
10.0 ±0.3
3.2 ±0.2
1
3
4
1
1
1.3 ±0.2
1.5 ±0.2
2.54
0.7 ±0.1
2.54
1 2 3
1.
2.
3.
Gate
Drain
Source
2.5 ±0.1
0.65 ±0.1
2.7 ±0.2
4.5 ±0.2
MP-45F (ISOLATED TO-220)
Drain
Gate
Gate Protection
Diode
Source
Body
Diode
The information in this document is subject to change without notice.
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
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