參數(shù)資料
型號: 2SK2723
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級
文件頁數(shù): 1/8頁
文件大?。?/td> 83K
代理商: 2SK2723
1994
DATA SHEET
The information in this document is subject to change without notice.
MOS Field Effect Power Transistors
2SK2723
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching spplications.
FEATURES
Low On-Resistance
R
DS (on) 1
= 40m
Max. (V
GS
= 10 V, I
D
= 13 A)
R
DS (on) 2
= 60m
Max. (V
GS
= 4 V, I
D
= 13 A)
Low C
iss
C
iss
= 830 pF Typ.
Built-in G-S Protection Diode
Isolated TO-220 Package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
A
= 25
°
C)
Total Power Dissipation (T
c
= 25
°
C)
Channel Temperature
Storage Temperature
*PW
10
μ
s, Duty Cycle
1%
V
DSS
V
GSS
I
D (DC)
I
D (pulse)
P
T
P
T
T
ch
T
stg
60
±
20
±
25
±
100
2.0
25
150
V
V
A
A
W
W
°
C
°
C
55 to +150
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
deveice acutally used, an addtional protection circiut is externally required if voltage exceeding the rated voltage
may be applied to this device.
Drain
Source
Body
Diode
Gate
Gate Protection
Diode
10.0
±
0.3
PACKAGE DIMENSIONS
(in millimeter)
MP-45F (ISOLATED TO-220)
4.5
±
0.2
2.7
±
0.2
2.5
±
0.1
1.3
±
0.2
1.5
±
0.2
2.54
4
0
1
1
0
1
0
3
0
0.7
±
0.1
1.Gate
2.Drain
3.Source
2.54
1
2
3
0.65
±
0.1
3.2
±
0.2
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10623EJ2V0DS00 (2nd edition)
Date Published April 1996 P
Printed in Japan
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