- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371548 > 2SK2689-01MR (FUJI ELECTRIC CO LTD) N-channel MOS-FET PDF資料下載
參數(shù)資料
| 型號： | 2SK2689-01MR |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-channel MOS-FET |
| 中文描述： | 50 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 393K |
| 代理商： | 2SK2689-01MR |
N-channel MOS-FET
30V
0,01
> Characteristics
2SK2689-01MR
FAP-IIIB Series
50A
40W
Typical Output Characteristics
I
D
=f(V
DS
); 80μs pulse test; T
C
=25°C
Drain-Source On-State Resistance vs. T
ch
R
DS(on)
= f(T
ch
); I
D
=25A; V
GS
=10V
Typical Transfer Characteristics
I
D
=f(V
GS
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
↑
I
D
↑
R
D
]
↑
I
D
1
2
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source On-State-Resistance vs. I
D
R
DS(on)
=f(I
D
); 80μs pulse test; T
C
=25°C
Typical Forward Transconductance vs. I
D
g
fs
=f(I
D
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
Gate Threshold Voltage vs. T
ch
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
↑
R
D
]
↑
g
f
↑
V
G
4
5
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitances vs. V
DS
C=f(V
DS
); V
GS
=0V; f=1MHz
Typical Gate Charge Characteristic
V
GS
=f(Qg); I
D
=50A; T
C
=25°C
Forward Characteristics of Reverse Diode
I
F
=f(V
SD
); 80μs pulse test; T
ch
=25°C
↑
C
↑
V
D
↑
V
G
↑
I
F
7
8
9
V
DS
[V]
→
Qg [nC]
→
V
SD
[V]
→
Maximum Avalanche Energy vs. starting T
ch
E
AV
=f(starting T
ch
): V
CC
=12V; I
AV
≤
50A
Safe Operation Area
I
D
=f(V
DS
): D=0,01, Tc=25°C
↑
Z
t
Transient Thermal impedance
Z
thch
=f(t) parameter:D=t/T
↑
E
A
10
↑
I
D
12
starting T
ch
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2690-01 | N-channel MOS-FET |
| 2SK2690 | N-channel MOS-FET |
| 2SK2691-01R | N-channel MOS-FET |
| 2SK2695-01 | N-channel MOS-FET |
| 2SK2698 | N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2689-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK2690-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.5 Milliohms;ID +/-80A;TO-3P;PD 125W;VGS +/ |
| 2SK2690-01SC-P | 制造商:Fuji Electric 功能描述: |
| 2SK2691-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK2698 | 功能描述:MOSFET N-Ch 500V 15A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。