參數(shù)資料
型號(hào)： 2SK2613
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII)
中文描述： 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山類型（喝醉MOSIII）
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 232K
代理商： 2SK2613
2SK2613
2002-08-09
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS
III
)
2SK2613
Switching Regulator Applications, DC-DC Converter and
Motor Drive Applications
Low drain-source ON resistance: R
DS (ON)
= 1.4
(typ.)
High forward transfer admittance: Y
fs
= 6.0 S (typ.)
Low leakage current: I
DSS
= 100 μA (max) (V
DS
= 800 V)
Enhancement-model: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
1000
V
Drain-gate voltage (R
GS
20 k )
V
DGR
1000
V
Gate-source voltage
V
GSS
30
V
DC
(Note 1)
I
D
8
Drain current
Pulse
(Note 1)
I
DP
24
A
Drain power dissipation (Tc 25°C)
P
D
150
W
Single pulse avalanche energy
(Note 2)
E
AS
910
mJ
Avalanche current
I
AR
8
A
Repetitive avalanche energy (Note 3)
E
AR
15
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
0.833
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
50
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD
90 V, T
ch
25°C, L 26.3 mH, R
G
25 , I
AR
8 A
Note 3: Repetitive rating: Pulse width limited by max junction temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURSE
JEDEC
―
JEITA
―
TOSHIBA
2
16C1B
Weight: 4.6 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2613(F) 功能描述:MOSFET MOSFET N-Ch 1000V 8A Rdson 1.7 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK2614 功能描述:MOSFET N-Ch 50V 20A Rdson 0.046 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK2614(Q) 功能描述:MOSFET N-Ch 50V 20A Rdson 0.046 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK2614(TE16L1) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 50V 20A 3-Pin(2+Tab) Case DP T/R
2SK2614(TE16L1,Q) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 50V 20A 3-Pin(2+Tab) Case DP T/R 制造商:Toshiba 功能描述:Trans MOSFET N-CH 50V 20A 3-Pin (2+Tab) DP T/R Cut Tape 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 50V 20A DP
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