參數(shù)資料
型號： 2SK2606
廠商： Toshiba Corporation
元件分類： DC/DC變換器
英文描述： N CHANNEL MOS TYPE (DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
中文描述： N通道馬鞍山型（DC - DC變換器，繼電器驅(qū)動器和電機驅(qū)動應(yīng)用）
文件頁數(shù)： 2/3頁
文件大?。?/td> 162K
代理商： 2SK2606
2SK2606
2002-06-27
2
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±30 V, V
DS
= 0 V
—
—
±10
μA
Gate
source breakdown voltage
V
(BR)
GSS
I
G
= ±10 μA, V
DS
= 0 V
±30
—
—
V
Drain cut
off current
I
DSS
V
DS
= 640 V, V
GS
= 0 V
—
—
100
μA
Drain
source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
800
—
—
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
2.0
—
4.0
V
Drain
source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 4 A,
—
1.0
1.2
Forward transfer admittance
|Y
fs
|
V
DS
= 15 V, I
D
= 4 A
3.0
7.0
—
S
Input capacitance
C
iss
—
2160
—
Reverse transfer capacitance
C
rss
—
45
—
Output capacitance
C
oss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
—
200
—
pF
Rise time
t
r
—
25
—
Turn
on time
t
on
—
60
—
Fall time
t
f
—
25
—
Switching time
Turn
off time
t
off
—
110
—
ns
Total gate charge (gate
source
plus gate
drain)
Q
g
—
68
—
Gate
source charge
Q
gs
—
38
—
Gate
drain (“miller”) Charge
Q
gd
V
DD
≈
400 V, V
GS
= 10 V, I
D
= 8 A
—
30
—
nC
Source
Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
I
DR
—
—
—
8
A
Pulse drain reverse current
(Note 1)
I
DRP
—
—
—
24
A
Forward voltage (diode)
V
DSF
I
DR
= 8 A, V
GS
= 0 V
—
—
1.9
V
Reverse recovery time
t
rr
—
1500
—
ns
Reverse recovery charge
Q
rr
I
DR
= 8 A, V
GS
= 0 V, dI
DR
/ dt = 100 A / μs
—
19
—
μC
Marking
※
Type
TOSHIBA
K2606
※
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2606(F) 功能描述:MOSFET MOSFET N-Ch 800V 8A Rdson 1.2 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK2607 功能描述:MOSFET N-CH 800V 9A TO-3PN RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK2607(F) 制造商:Toshiba 功能描述:Nch 800V 9A 1.2@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-3P 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, TO-3P 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W ;RoHS Compliant: Yes 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Nch,800V/9A/1.2ohm,TO-3P(N)
2SK2607(F,T) 功能描述:MOSFET N-Ch FET RDS 1.0 Ohm IDSS 100uA VDS 640V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK2607 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-3P
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