參數(shù)資料
型號(hào)： 2SK2374
廠(chǎng)商： PANASONIC CORP
元件分類(lèi)： JFETs
英文描述： Silicon N-Channel Power F-MOS FET
中文描述： 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TOP3E, 3 PIN
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 44K
代理商： 2SK2374
1
Power F-MOS FETs
2SK2374
Silicon N-Channel Power F-MOS FET
I
Features
G
Avalanche energy capacity guaranteed
G
High-speed switching
G
Low ON-resistance
G
No secondary breakdown
unit: mm
I
Applications
G
Contactless relay
G
Diving circuit for a solenoid
G
Driving circuit for a motor
G
Control equipment
G
Switching power supply
1: Gate
2: Drain
3: Source
TOP-3E Package
I
Electrical Characteristics
(T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
Conditions
V
DS
= 720V, V
GS
= 0
V
GS
= ±30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 3A
V
DS
= 25V, I
D
= 3A
I
DR
= 5A, V
GS
= 0
V
DS
= 20V, V
GS
= 0, f = 1MHz
V
DD
= 200V, I
D
= 3A
V
GS
= 10V, R
L
= 66.6
min
900
2
1.5
typ
2
3.5
1400
140
60
30
60
60
170
max
100
±1
5
2.8
1.6
1.25
41.67
Unit
μ
A
μ
A
V
V
S
V
pF
pF
pF
ns
ns
ns
ns
°C/W
°C/W
I
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
900
±30
±5
±10
45
100
3
150
55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
*
L = 3.6mH, I
L
= 5A, 1 pulse
15.5±0.5
2
2
2
1
3
5
2
0
2
2
1
3.0±0.3
φ
3.2±0.1
4
5.45±0.3
1
2
3
5.45±0.3
1.1±0.1
2.0±0.2
4.0
5
5
5
5
5
5
0.7±0.1
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2375 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET
2SK2376 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
2SK2376(Q) 功能描述:MOSFET MOSFET N-Ch 60V 45A Rdson=0.017Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK2376(SM,Q) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) TO-220SM
2SK2376_06 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
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