參數(shù)資料
型號： 2SK2380
廠商： PANASONIC CORP
元件分類： 小信號晶體管
英文描述： DSUB 50 M CRIMP FLOA
中文描述： 1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
封裝： SC-75, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 31K
代理商： 2SK2380
1
Silicon Junction FETs (Small Signal)
2SK2380
Silicon N-Channel J unction FET
unit: mm
For impedance conversion in low frequency
For infrared sensor
I
Features
G
Low gate to source leakage current, I
GSS
G
Small capacitance of C
iss
, C
oss
, C
rss
G
SS-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
I
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
GDO
V
GSO
I
D
I
G
P
D
T
ch
T
stg
Ratings
40
40
±1
10
125
125
55 to +125
Unit
V
V
mA
mA
mW
°C
°C
I
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
=
20V, V
DS
= 0
I
G
=
10
μ
A, V
DS
= 0
V
DS
= 10V, I
D
= 1
μ
A
V
DS
= 10V, V
GS
= 0, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
min
50
40
0.05
max
200
0.5
3
Unit
μ
A
nA
V
V
mS
pF
pF
pF
*
I
DSS
rank classification
typ
1.3
1
0.4
0.4
Runk
I
DSS
(mA)
Marking Symbol
Q
50 to 100
EBQ
R
70 to 130
EBR
S
100 to 200
EBS
1: Source
2: Drain
3: Gate
EIAJ: SC-75
SS-Mini Type Package (3-pin)
Marking Symbol (Example): EB
1.6±0.15
1
1
0
0
0
0
0
0
0.8±0.1
0.4
0.4
0
+
–
0
+
–
1
2
3
0.2±0.1
Symbol
I
DSS*
I
GSS
V
DS
V
GSC
| Y
fs
|
C
iss
C
oss
C
rss
相關(guān)PDF資料
PDF描述
2SK2381 High Speed,High Current Switching Application N Channel MOSFET(高速大電流轉(zhuǎn)換用 N溝道 MOS場效應(yīng)管)
2SK2382 High Speed,High Current Switching Application N Channel MOSFET(高速大電流轉(zhuǎn)換用 N溝道 MOS場效應(yīng)管)
2SK2383 Silicon N-Channel Power F-MOS FET
2SK2385 High Speed,High Current Switching Application N Channel MOSFET(高速大電流轉(zhuǎn)換用 N溝道 MOS場效應(yīng)管)
2SK2391 High Speed, High Current Switching Application N Channel MOSFET(高速大電流轉(zhuǎn)換用的N溝道MOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK23800QL 功能描述:JFET LOW FREQ.IMPEDANCE CONVRT RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> JFET（結(jié)點(diǎn)場效應(yīng) 系列:- 標(biāo)準(zhǔn)包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關(guān)）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開）:200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應(yīng)商設(shè)備封裝:3-ECSP1006 功率 - 最大:100mW
2SK2381 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 200V 5A 3PIN TO-220(NIS) - Rail/Tube
2SK2381(F) 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 200V 5A 3-Pin(3+Tab) TO-220NIS
2SK2381(F,T) 功能描述:MOSFET MOSFET N-Ch 200V 5A Rdson 0.8 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK2381_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*