參數(shù)資料
型號： 2SK2159
廠商： NEC Corp.
英文描述： N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
中文描述： N溝道場效應(yīng)晶體管的高速開關(guān)
文件頁數(shù)： 2/6頁
文件大?。?/td> 62K
代理商： 2SK2159
2SK2159
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
I
DSS
V
DS
= 60 V, V
GS
= 0
1.0
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
14 V, V
DS
= 0
±
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
0.5
0.9
1.1
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 1.0 A
0.4
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 1.5 V, I
D
= 0.1 A
0.55
0.7
Drain to Source On-state Resistance
R
DS(on)2
V
GS
= 2.5 V, I
D
= 1.0 A
0.27
0.5
Drain to Source On-state Resistance
R
DS(on)3
V
GS
= 4.0 V, I
D
= 1.0 A
0.22
0.3
Input Capacitance
C
iss
V
DS
= 10 V, V
GS
= 0,
f = 1.0 MHz
319
pF
Output Capacitance
C
oss
109
pF
Reverse Transfer Capacitance
C
rss
22
pF
Turn-On Delay Time
t
d(on)
V
DD
= 25 V, I
D
= 1.0 A
V
GS(on)
= 3 V, R
G
= 10
R
L
= 25
38
ns
Rise Time
t
r
128
ns
Turn-Off Delay Time
t
d(off)
237
ns
Fall Time
t
f
130
ns
相關(guān)PDF資料
PDF描述
2SK2160 Very High-Speed Switching Applications
2SK2161 Very High-Speed Switching Applications
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2SK2171 N-Channel Junction Silicon FET for High-Frequency, Low-Frequency Amplifier Analog Switch Applications(應(yīng)用于高頻，低頻放大器模擬開關(guān)的N溝道結(jié)型場效應(yīng)管)
2SK2174S Silicon N-Channel MOS FET(N溝道MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2159-AZ 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA
2SK2159-T1 制造商:Renesas Electronics Corporation 功能描述:
2SK2159-T1(AZ) 制造商:Renesas Electronics 功能描述:60V(Max) 60A(Max) 0.0087@10V(Max) TO252-3 Tape & Reel 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 2A 4-Pin(3+Tab) SC-62 T/R
2SK2159-T1-AZ 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 2A 4-Pin(3+Tab) SC-62 T/R
2SK2159-T2-AZ 制造商:Renesas Electronics Corporation 功能描述:
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