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參數(shù)資料
| 型號： | 2SJ647 |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場效應(yīng)管 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 62K |
| 代理商： | 2SJ647 |
Data Sheet D16530EJ1V0DS
4
2SJ647
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS
(on
)-
Drai
n
t
o
S
ourc
e
On-s
ta
te
Res
is
tanc
e
-
0
1
2
3
4
-50
0
50
100
150
Pulsed
VGS =
2.5 V, ID = 0.15 A
VGS =
4.0 V, ID = 0.2 A
VGS =
4.5 V, ID = 0.2 A
R
DS
(on
)-
Drai
n
t
o
S
ourc
e
On-s
ta
te
Res
is
tanc
e
-
0
1
2
3
4
0-2
-4
-6
-8
-10
-12
Pulsed
ID =
0.2 A
Tch – Channel Temperrature -
°CVGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS
(on
)-
Drai
n
t
o
S
ourc
e
On-s
ta
te
Res
is
tanc
e
-
0
1
2
3
4
-0.01
-0.1
-1
-10
VGS =
4.5 V
Pulsed
TA = 125°C
75°C
25°C
R
DS
(on
)-
Drai
n
t
o
S
ourc
e
On-s
ta
te
Res
is
tanc
e
-
0
1
2
3
4
-0.01
-0.1
-1
-10
VGS =
4.0 V
Pulsed
25°C
75°C
TA = 125°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
0
1
2
3
4
-0.01
-0.1
-1
-10
VGS =
2.5 V
Pulsed
25°C
75°C
TA = 125°C
1
10
100
-0.1
-1
-10
-100
VGS = 0 V
f = 1.0 MHz
Ciss
Coss
Crss
R
DS
(on)
-
Drai
n
t
o
S
ourc
e
On-s
ta
te
Res
is
tanc
e
-
m
ID - Drain Current - A
C
is
s,
C
os
s,
C
rs
s-
Capac
itanc
e
–
pF
VDS - Drain to Source Voltage - V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ647-T1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ648 | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ648-T1-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 20V 0.4A 3-Pin SC-75 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,20V,0.4A,1.17ohm,USM3 制造商:Renesas 功能描述:Trans MOSFET P-CH 20V 0.4A 3-Pin SC-75 T/R |
| 2SJ649 | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ649-AZ | 功能描述:MOSFET P-CH -60V -20A TO-220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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