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參數(shù)資料
| 型號： | 2SJ647 |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場效應(yīng)管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 2SJ647 |
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confirm that this is the latest version.
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MOS FIELD EFFECT TRANSISTOR
2SJ647
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
D16530EJ1V0DS00 (1st edition)
Date Published
January 2003 NS CP(K)
Printed in Japan
2003
DESCRIPTION
The 2SJ647 is a switching device which can be driven directly
by a 2.5 V power source.
The 2SJ647 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
2.5 V drive available
Low on-state resistance
RDS(on)1 = 1.45
MAX. (VGS = 4.5 V, ID = 0.2 A)
RDS(on)2 = 1.55
MAX. (VGS = 4.0 V, ID = 0.2 A)
RDS(on)3 = 2.98
MAX. (VGS = 2.5 V, ID = 0.15 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ647
SC-70 (SSP)
Remark Marking: H22
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m12
V
Drain Current (DC) (TA = 25°C)
ID(DC)
m0.4
A
Drain Current (pulse)
Note1
ID(pulse)
m1.6
A
Total Power Dissipation
Note2
PT
0.2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 2500 mm
2 x 1.1 mm.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution
This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD ±100 V TYP. at C = 200 pF, R = 0, Single Pulse.
PACKAGE DRAWING (Unit: mm)
2.1 ± 0.1
1.25 ± 0.1
0.65
0.3
0.65
2.0
±
0.2
0.9
±
0.1
0
to
0.1
0.15
+0.1 –0.05
2
1
3
+0.1 –0
0.3
+0.1 –0
0.3
Marking
1 : Source
2 : Gate
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
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| 2SJ648 | MOS FIELD EFFECT TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ647-T1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ648 | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ648-T1-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 20V 0.4A 3-Pin SC-75 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,20V,0.4A,1.17ohm,USM3 制造商:Renesas 功能描述:Trans MOSFET P-CH 20V 0.4A 3-Pin SC-75 T/R |
| 2SJ649 | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ649-AZ | 功能描述:MOSFET P-CH -60V -20A TO-220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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