參數(shù)資料
型號： 2SJ625
廠商： NEC Corp.
英文描述： T-NPN-SI HIGH CURRENT AMP
中文描述： MOS場效應(yīng)管
文件頁數(shù)： 4/8頁
文件大小： 66K
代理商： 2SJ625
Data Sheet D15961EJ1V0DS
4
2SJ625
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
-2
-4
-6
-8
-10
-12
0
-0.4
-0.8
-1.2
-1.6
-2
Pulsed
2.5 V
V
GS
=
4.5 V
1.8 V
V
DS
- Drain to Source Voltage - V
I
D
-0.0001
-0.001
-0.01
-0.1
-1
-10
0
-1
-2
-3
V
DS
=
10 V
Pulsed
T
A
= 125°C
75°C
25°C
25°C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
-0.4
-0.6
-0.8
-1
-50
0
50
100
150
V
DS
=
10 V
I
D
=
1.0 mA
T
ch
- Channel Temperature -
°
C
|
f
0.1
1
10
100
-0.01
-0.1
-1
-10
V
DS
=
10 V
Pulsed
T
A
=
25°C
25°C
75°C
125°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
D
50
100
150
200
250
300
-50
0
50
100
150
Pulsed
V
GS
=
1.8 V, I
D
=
1.0 A
V
GS
=
2.5 V, I
D
=
1.5 A
V
GS
=
4.5 V, I
D
=
1.5 A
T
ch
- Channel Temperature - °C
D
50
100
150
200
250
300
0
-2
-4
-6
-8
Pulsed
I
D
=
1.5 A
V
GS
- Gate to Source Voltage - V
相關(guān)PDF資料
PDF描述
2SJ626 Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ625-T1B-A 制造商:Renesas Electronics 功能描述:Cut Tape
2SJ625-T1B-A/XM 制造商:Renesas Electronics Corporation 功能描述:
2SJ626 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
2SJ626-T1B 制造商:Renesas Electronics Corporation 功能描述:
2SJ626-T1B-A 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 1.5A 3-Pin Thin-Type Mini-Mold T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,1.5A,0.31ohm,SC-96MM 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 1.5A 3-Pin Thin-Type Mini-Mold T/R
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