參數(shù)資料
型號(hào)： 2SJ625
廠商： NEC Corp.
英文描述： T-NPN-SI HIGH CURRENT AMP
中文描述： MOS場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 66K
代理商： 2SJ625
Data Sheet D15961EJ1V0DS
3
2SJ625
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
d
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°
C
P
T
0
0.25
0.5
0.75
1
1.25
1.5
0
25
50
75
100
125
150
175
Mounted on FR-4 board,
t
≤
5 sec
T
A
- Ambient Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
I
D
-0.01
-0.1
-1
-10
-100
-0.1
-1
-10
-100
100 ms
10 ms
I
D(pulse)
I
D(DC)
PW = 1 ms
R
DS(on)
Limited
(V
GS
=
4.5 V)
5 s
Single Pulse
Mounted on FR-4 board of
5000 mm
2
x 1.1 mm
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
°
C
1
10
100
1000
Single Pulse
Without board
Mounted on FR-4 board of
5000 mm
2
x 1.1 mm
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
相關(guān)PDF資料
PDF描述
2SJ626 Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V
2SJ633 2SJ633
2SJ634 DC/ DC CONVERTER TRANSISTOR
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2SJ643 P CHANNEL MOS SILICON TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ625-T1B-A 制造商:Renesas Electronics 功能描述:Cut Tape
2SJ625-T1B-A/XM 制造商:Renesas Electronics Corporation 功能描述:
2SJ626 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
2SJ626-T1B 制造商:Renesas Electronics Corporation 功能描述:
2SJ626-T1B-A 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 1.5A 3-Pin Thin-Type Mini-Mold T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,1.5A,0.31ohm,SC-96MM 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 1.5A 3-Pin Thin-Type Mini-Mold T/R
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