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參數(shù)資料
| 型號： | 2SJ576 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P通道MOS FET的性（P溝道MOSFET的） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 87K |
| 代理商： | 2SJ576 |
2SJ576
3
Main Characteristics
Package Dimensions
Unit: mm
-0.1
Drain to Source Voltage V (V)
-1.0
-10
-50
400
300
200
100
0
50
100
150
200
-5
-1.0
-0.5
-0.1
-0.05
-0.01
-0.005
-0.001
-0.0005
PW=10ms
(1sho)
DCOpeaion
Maximum Safe Operation Area
Operation in this area
is limited by RDS(on)
C
Ambient Temperature Ta ( °C)
Power vs. temperature Derating
D
D
10 μs
100 μs
1 ms
-0.002
-0.02
-0.2
-2
-0.05
-0.2 -0.5
-2
-5
-20
Ta=25 °C
*Value on the alumina ceramic board.(12.5x20x0.7mm)
Value on the alumina ceramic board.(12.5x20x0.7mm)
0.16
0 ~ 0.1
0
+ 0.10
0.3
+ 0.10
0.65
1.3
2.0
0.65
+ 0.2
+ 0.2
2
+
–
0
1
0
+
–
Hitachi Code
EIAJ
JEDEC
CMPAK
SC–70
–
+
–
0
0.3
+ 0.1
0.3
+ 0.1
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