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參數(shù)資料
| 型號(hào)： | 2SJ580 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Ultrahigh-Speed Switching Applications |
| 中文描述： | 超高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 29K |
| 代理商： | 2SJ580 |
2SJ580
No.6669-1/4
Ultrahigh-Speed Switching Applications
P-Channel Silicon MOSFET
2SJ580
Features
Low ON-resistanse.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
Conditions
Ratings
Unit
V
V
A
A
W
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
--60
±
20
--1.8
--7.2
1.5
3.5
150
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (250mm
2
0.8mm)
Tc=25
°
C
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=--1mA, VGS=0
VDS=--60V, VGS=0
VGS=
±
16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1A
ID=--1A, VGS=--10V
ID=--0.8A, VGS=-4V
--60
V
μ
A
μ
A
V
S
m
m
--10
±
10
--2.4
--1.0
1.6
2.3
300
400
400
560
Static Drain-to-Sourse On-State Resistance
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Package Dimensions
unit : mm
2062A
[2SJ580]
90100 TS IM TA-2733
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
4.5
1.6
0.5
0.4
1.5
1
2
4
3.0
1.5
0.4
0.75
3
2
1
Ordering number : ENN6669
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ583 | Ultrahigh-Speed Switching Applications |
| 2SJ583LS | Ultrahigh-Speed Switching Applications |
| 2SJ584LS | Ultrahigh-Speed Switching Applications |
| 2SJ585LS | Ultrahigh-Speed Switching Applications |
| 2SJ586 | Silicon P Channel MOS FET High Speed Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ580-TD-E | 制造商:ON Semiconductor 功能描述: |
| 2SJ583 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ583LS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ584LS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ585LS | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 250V 6.5A TO-220FI |
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