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參數(shù)資料
| 型號： | 2SJ575 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P通道MOS FET的性（P溝道MOSFET的） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 103K |
| 代理商： | 2SJ575 |
2SJ575
2
Absolute Maximum Ratings (Ta = 25
°
C)
Note:
1.PW
≤
10
μ
s, duty cycle
≤
1%
2.Value on the alumina ceramic board (12.5x20x0.7mm)
Electrical Characteristics (Ta = 25
°
C)
Note:
3.Pulse test
4.Marking is AP
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current I
DR
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
Ratings
-30
±
20
-100
-400
-100
400
150
–55 to +150
Unit
V
V
mA
mA
mA
mW
°
C
°
C
Pch
Note 2
Tch
Tstg
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltege drain
current
Gate to source cutoff voltage V
GS(off)
Static drain to source on state
resistance
Symbol
V
(BR)DSS
Min
-30
Typ
—
Max
—
Unit
V
Test Conditions
I
D
= -100
μ
A, V
GS
= 0
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
I
GSS
I
DSS
—
—
—
—
±
5
-1
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= -30 V, V
GS
= 0
-1.3
—
—
2.8
-2.3
3.3
V
I
D
= -10
μ
A, V
DS
= -5 V
I
= -50 mA,V
GS
= -10 V
D
R
DS(on)
R
DS(on)
—
5.7
7.9
I
= -50 mA,V
GS
= -4 V
D
Forward transfer admittance
|y
fs
|
68
105
—
mS
I
= -50 mA, V
DS
= -10 V
D
Input capacitance
Output capacitance
Reverse transfer capacitance Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
—
—
—
—
—
—
—
25
20
8
10
15
40
45
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V
DS
= -10 V
V
GS
= 0
f = 1 MHz
I
D
= -50mA, V
GS
= -10 V
R
L
= 200
t
d(on)
t
r
t
d(off)
t
f
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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| 2SJ580 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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