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參數(shù)資料
| 型號： | 2SJ552(S) |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 2SJ552(S) |
2SJ550(L),2SJ550(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–60
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
—
V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
—
–10
AV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
—
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
—
0.075
0.095
I
D = –8A, VGS = –10V
Note4
resistance
R
DS(on)
—
0.105
0.155
I
D = –8A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
6.5
11
—
S
I
D = –8A, VDS = –10V
Note4
Input capacitance
Ciss
—
850
—
pF
V
DS = –10V
Output capacitance
Coss
—
420
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
110
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
12
—
ns
V
GS = –10V, ID = –8A
Rise time
t
r
—
75
—
ns
R
L = 3.75
Turn-off delay time
t
d(off)
—
125
—
ns
Fall time
t
f
—75
—
ns
Body–drain diode forward voltage
V
DF
—
–1.1
—
V
I
F = –15A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
70
—
ns
I
F = –15A, VGS = 0
diF/ dt =50A/s
Note:
4. Pulse test
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ553(L) | |
| 2SJ553(S) | |
| 2SJ557 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 2SJ559 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ552STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ553 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ553(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-262VAR |
| 2SJ553(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263VAR |
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