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參數(shù)資料
| 型號： | 2SJ528S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 53K |
| 代理商： | 2SJ528S |
2SJ528(L),2SJ528(S)
4
–2.0
–1.6
–1.2
–0.8
–0.4
0
–4
–8
–12
–16
–20
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
0
–10 V
V = –4 V
1
0.5
0.05
0.02
0.01
–0.1
–0.3
–1
–3
–10
–30
–100
–2 A
–1 A
0.2
0.1
–10 V
V = –4 V
Pulse Test
Pulse Test
Pulse Test
–0.1
–3
–100
0.1
30
100
10
1
0.3
–0.3
–1
–10
–30
3
–5 A
–2 A
–1 A
75
°
C
25
°
C
Ta = –25
°
C
V = –10 V
Pulse Test
-1,–2 A
–5 A
I = –5 A
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
°
C)
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ532 | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2SJ534 | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ535 | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ539 | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ540 | SILICON CONTROLLED RECTIFIER,800V V(DRM),7.6A I(T),TO-220AB RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ528S(TL-E) | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 7A 3-Pin(2+Tab) DPAK(S) T/R |
| 2SJ528S-E | 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 7A 3-Pin(2+Tab) DPAK(S) |
| 2SJ528STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ529 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ529(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-251AA |
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