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參數(shù)資料
| 型號(hào)： | 2SJ528S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道MOS FET的高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大小： | 53K |
| 代理商： | 2SJ528S |
2SJ528(L),2SJ528(S)
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
E
AR
Pch
Note2
–60
V
Gate to source voltage
±
20
V
Drain current
–7
A
Drain peak current
Note1
–28
A
Body-drain diode reverse drain current
–7
A
Avalenche current
Note3
–7
A
Avalenche energy
Note3
4.2
mJ
Channel dissipation
20
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Zero gate voltege drain current
–60
—
—
V
I
D
= –10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
DS
= –60 V, V
GS
= 0
V
GS
=
±
16V, V
DS
= 0
I
D
= –1mA, V
DS
= –10V
I
D
= –4A, V
GS
= –10V
Note4
I
D
= –4A, V
GS
= –4V
Note4
I
D
= –4A, V
DS
= –10V
Note4
V
DS
= –10V
V
GS
= 0
f = 1MHz
±
20
—
—
V
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
–10
μ
A
μ
A
Gate to source leak current
—
—
±
10
Gate to source cutoff voltage
–1.0
—
–2.0
V
Static drain to source on state
—
0.17
0.22
resistance
—
0.24
0.37
Forward transfer admittance
3.0
5.0
—
S
Input capacitance
—
400
—
pF
Output capacitance
Coss
—
220
—
pF
Reverse transfer capacitance
Crss
—
75
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
10
—
ns
V
GS
= –10V, I
D
= –4A
R
L
= 7.5
Rise time
—
40
—
ns
Turn-off delay time
—
75
—
ns
Fall time
—
65
—
ns
Body–drain diode forward voltage
—
–1.1
—
V
I
F
= –7A, V
GS
= 0
I
= –7A, V
= 0
diF/ dt = 50A/
μ
s
Body–drain diode reverse
recovery time
Note:
4. Pulse test
—
65
—
ns
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