參數(shù)資料
型號(hào): 2SJ517
元件分類: 小信號(hào)晶體管
英文描述: 2000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: UPAK-3
文件頁數(shù): 9/11頁
文件大?。?/td> 59K
代理商: 2SJ517
2SJ517
5
–1.0
–0.8
–0.6
–0.4
–0.2
0
–2
–4
–6
–8
–10
1
0.1
–0.1 –0.2
–0.5
–1
–2
–5
–10
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
0
0.2
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
I
= –2 A
D
–1 A
–0.5 A
0.5
0.01
0.02
0.05
V
= –2.5 V
GS
–4 V
Pulse Test
–1 A
I
= –2 A
D
V
= –2.5 V
GS
–4 V
–0.5 A
–0.5, –1, –2 A
10
1
–0.1 –0.2
–0.5
–1
–2
–5
–10
2
5
0.1
0.2
0.5
25 °C
Tc = –25 °C
75 °C
V
= –10 V
Pulse Test
DS
相關(guān)PDF資料
PDF描述
2SJ549L 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ549S-E 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ549S-E 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ549S 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ549STL-E 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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2SJ517YYTR-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ518 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ518AZTL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET