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參數(shù)資料
| 型號(hào)： | 2SJ517 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | UPAK-3 |
| 文件頁(yè)數(shù)： | 10/11頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | 2SJ517 |
2SJ517
6
5
200
500
100
20
10
50
–0.1 –0.2
–0.5
–1
–2
–5
–10
0
–4
–8
–12
–16
–20
500
200
100
20
10
50
1000
0
–10
–20
–30
–40
0
–4
–8
–12
–16
–20
–50
4
8
12
16
20
200
100
20
50
10
500
5
–0.1 –0.2
–0.5
–1
–2
–5
–10
di / dt = 50 A / s
V
= 0, Ta = 25 °C
GS
VGS
VDS
V
= –5 V
–10 V
DD
V
= –4 V, V
= –10 V
duty < 1 %
GS
DD
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
V
= –5 V
–10 V
DD
t f
r
t
d(on)
t
d(off)
t
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| 2SJ549L | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ549S-E | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ549S-E | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ549S | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ549STL-E | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ517YYTL | 制造商:Hitachi 功能描述: |
| 2SJ517YYTL-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 20V 2A 4-Pin(3+Tab) UPAK T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,20V,2A,0.18ohm,UPAK 制造商:Renesas 功能描述:Trans MOSFET P-CH 20V 2A 4-Pin(3+Tab) UPAK T/R |
| 2SJ517YYTR-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ518 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ518AZTL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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