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參數(shù)資料
| 型號： | 2SJ451 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場效應晶體管 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 40K |
| 代理商： | 2SJ451 |
2SJ451
4
–1.0
–0.8
–0.6
–0.4
–0.2
0
–2
–4
–6
–8
–10
I = –0.2 A
–0.1 A
–0.05 A
Pulse Test
Gate to Source Voltage V (V)
D
D
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
20
50
10
2
1
5
–0.01–0.02
–0.05 –0.1 –0.2
Drain Current I (A)
–0.5
–1
V = –2.5 V
–4 V
Pulse Test
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
10
8
6
4
2
–40
0
40
80
120
160
0
V = –2.5 V
I = –0.05 A
D
–4 V
–0.2 A
–0.05, –0.1 A
–0.1 A
Pulse Test
Case Temperature Tc (
°
C)
Static Drain to Source on State Resistance
vs. Temperature
R
D
S
–0.01 –0.03 –0.1 –0.3
–1
–3
–10
2
1
0.2
0.1
0.05
0.5
0.02
0.01
0.005
0.002
25
°
C
Tc = –25
°
C
75
°
C
V = –10 V
Pulse Test
F
Drain Current I (A)
Forward Transfer Admittance vs.
Drain Current
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PDF描述 |
|---|---|
| 2SJ452 | Silicon P-Channel MOS FET |
| 2SJ458 | P CHANNEL MOS SILICON TRANSISTOR |
| 2SJ459 | Ultrahigh-Speed Switching Applications |
| 2SJ460 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SJ461 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ451ZK-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ451ZK-TR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ452 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ453 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 3A I(D) | TO-251 |
| 2SJ453TP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 3A I(D) | TO-251VAR |
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