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參數(shù)資料
| 型號(hào)： | 2SJ451 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 40K |
| 代理商： | 2SJ451 |
2SJ451
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
Pch
–20
V
Gate to source voltage
±
20
V
Drain current
–0.2
A
Drain peak current
–0.4
A
Channel dissipation
150
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1%
Marking is "ZK–".
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–20
—
—
V
I
D
= –100
μ
A, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Zero gate voltage drain current I
DSS
Gate to source leak current
—
—
–1.0
μ
A
μ
A
V
DS
= –16 V, V
GS
= 0
V
GS
=
±
16 V, V
DS
= 0
I
D
= –10
μ
A, V
DS
= –5 V
I
D
= –100 mA
V
GS
= –4 V*
1
I
D
= –40 mA
V
GS
= –2.5 V*
1
I
D
= –100 mA*
1
V
DS
= –10 V
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
I
GSS
V
GS(off)
R
DS(on)
1
—
—
±
2.0
Gate to source cutoff voltage
–0.5
—
–1.5
V
Static drain to source on state
resistance
—
2.3
3.5
Static drain to source on state
resistance
R
DS(on)
2
—
5.0
9.0
Foward transfer admittance
|y
fs
|
0.13
0.23
—
S
Input capacitance
Ciss
—
2.4
—
pF
Output capacitance
Coss
—
31
—
pF
Reverse transfer capacitance
Crss
—
0.6
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
—
0.17
—
μ
s
μ
s
μ
s
μ
s
V
GS
= –10 V, I
D
= –0.1 A
R
L
= 100
Rise time
—
0.68
—
Turn-off delay time
—
3.0
—
Fall time
Note:
—
2.8
—
1. Pulse Test
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| 2SJ451ZK-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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| 2SJ453 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 3A I(D) | TO-251 |
| 2SJ453TP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 3A I(D) | TO-251VAR |
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