參數(shù)資料
型號(hào): 2SJ246L
廠商: Hitachi,Ltd.
英文描述: SILICON P-CHANNEL MOS FET
中文描述: 硅P溝道MOS場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 39K
代理商: 2SJ246L
Application
High speed power switching
Features
Low on–resistance
High speed switching
Low drive current
4V gate drive device can be driven from
5V source.
Suitable for Switching regulator, DC – DC
converter
1
2, 4
3
DPAK–1
3
2
1
4
12
4
3
1. Gate
2. Drain
3. Source
4. Drain
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source voltage
V
DSS
———————————————————————————————————————————
Gate to source voltage
V
GSS
———————————————————————————————————————————
Drain current
I
D
———————————————————————————————————————————
Drain peak current
I
D(pulse)
*
———————————————————————————————————————————
Body–drain diode reverse drain current
I
DR
———————————————————————————————————————————
Channel dissipation
Pch**
———————————————————————————————————————————
Channel temperature
Tch
———————————————————————————————————————————
Storage temperature
Tstg
———————————————————————————————————————————
*
PW
10 μs, duty cycle
1 %
**
Value at Tc = 25 °C
Symbol
Ratings
Unit
–30
V
±20
V
–7
A
–28
A
–7
A
20
W
150
°C
–55 to +150
°C
2SJ246
L
, 2SJ246
S
SILICON P-CHANNEL MOS FET
相關(guān)PDF資料
PDF描述
2SJ247 Silicon P-Channel MOS FET
2SJ248 Silicon P-Channel MOS FET
2SJ254 Very High-Speed Switching Applications
2SJ255 Very High-Speed Switching Applications
2SJ256 Very High-Speed Switching Applications
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