- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370096 > 2SJ246 (Hitachi,Ltd.) SILICON P-CHANNEL MOS FET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SJ246 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | SILICON P-CHANNEL MOS FET |
| 中文描述： | 硅P溝道MOS場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | 2SJ246 |
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source breakdown
V
(BR)DSS
–30
voltage
———————————————————————————————————————————
Gate to source breakdown
V
(BR)GSS
±20
voltage
———————————————————————————————————————————
Gate to source leak current
I
GSS
—
———————————————————————————————————————————
Zero gate voltage drain current
I
DSS
—
———————————————————————————————————————————
Gate to source cutoff voltage
V
GS(off)
–1.0
———————————————————————————————————————————
Static drain to source on state
R
DS(on)
—
resistance
————————————————————————
—
Symbol
Min
Typ
Max
Unit
Test conditions
—
—
V
I
D
= –10 mA, V
GS
= 0
—
—
V
I
G
= ±100 μA, V
DS
= 0
—
±10
μA
V
GS
= ±16 V, V
DS
= 0
—
–100
μA
V
DS
= –25 V, V
GS
= 0
—
–2.5
V
V
DS
= –10 V, ID= –1 mA
0.12
0.17
I
D
= –4 A
V
GS
= –10 V
0.21
0.31
I
D
= –4 A
V
GS
= –4 V
———————————————————————————————————————————
Forward transfer admittance
|y
fs
|
3.0
5.0
—
S
V
DS
= –10 V
I
D
= –4 A
———————————————————————————————————————————
Input capacitance
Ciss
—
————————————————————————————————
Output capacitance
Coss
—
————————————————————————————————
Reverse transfer capacitance
Crss
—
———————————————————————————————————————————
Turn–on delay time
t
d(on)
—
————————————————————————————————
Rise time
t
r
—
————————————————————————————————
Turn–off delay time
t
d(off)
—
————————————————————————————————
Fall time
t
f
—
———————————————————————————————————————————
Body–drain diode forward
V
DF
—
voltage
———————————————————————————————————————————
Body–drain diode reverse
t
rr
—
recovery time
———————————————————————————————————————————
660
—
pF
V
DS
= –10 V
465
—
pF
V
GS
= 0
180
—
pF
f = 1 MHz
10
—
ns
V
GS
= –10 V
55
—
ns
I
D
= –4 V
135
—
ns
R
L
= 7.5
135
—
ns
–1.2
—
V
I
F
= –7 A, V
GS
= 0
90
—
μs
IF= –7 A, V
GS
= 0,
di
F
/ dt = 50 A / μs
2SJ246 L , 2SJ246 S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ246L | SILICON P-CHANNEL MOS FET |
| 2SJ247 | Silicon P-Channel MOS FET |
| 2SJ248 | Silicon P-Channel MOS FET |
| 2SJ254 | Very High-Speed Switching Applications |
| 2SJ255 | Very High-Speed Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ246(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7A I(D) | TO-251AA |
| 2SJ246(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7A I(D) | TO-252AA |
| 2SJ246L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON P-CHANNEL MOS FET |
| 2SJ246S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON P-CHANNEL MOS FET |
| 2SJ247 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。