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參數(shù)資料
| 型號(hào)： | 2SJ245 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | SILICON P-CHANNEL MOS FET |
| 中文描述： | 硅P溝道MOS場(chǎng)效應(yīng)管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 39K |
| 代理商： | 2SJ245 |
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
———————————————————————————————————————————–
Drain to source breakdown
V
(BR)DSS
–60
voltage
———————————————————————————————————————————–
Gate to source breakdown
V
(BR)GSS
±20
voltage
———————————————————————————————————————————–
Gate to source leak current
I
GSS
—
———————————————————————————————————————————–
Zero gate voltage drain current
I
DSS
—
———————————————————————————————————————————–
Gate to source cutoff voltage
V
GS(off)
–1.0
———————————————————————————————————————————–
Static drain to source on state
R
DS(on)
—
resistance
————————————————————————–
—
Symbol
Min
Typ
Max
Unit
Test conditions
—
—
V
I
D
= –10 mA, V
GS
= 0
—
—
V
I
G
= ±100 μA, V
DS
= 0
—
±10
μA
V
GS
= ±16 V, V
DS
= 0
—
–100
μA
V
DS
= –50 V, V
GS
= 0
—
–2.0
V
I
D
= –1 mA, VDS= –10 V
0.2
0.25
I
D
= –3 A
V
GS
= –10 V *
0.28
0.38
I
D
= –3 A
V
GS
= –4 V *
———————————————————————————————————————————–
Forward transfer admittance
|y
fs
|
2.2
3.7
—
S
I
D
= –3 A
V
DS
= –10 V *
———————————————————————————————————————————–
Input capacitance
Ciss
—
————————————————————————————————
Output capacitance
Coss
—
————————————————————————————————
Reverse transfer capacitance
Crss
—
———————————————————————————————————————————–
Turn–on delay time
t
d(on)
—
————————————————————————————————
Rise time
t
r
—
————————————————————————————————
Turn–off delay time
t
d(off)
—
————————————————————————————————
Fall time
t
f
—
———————————————————————————————————————————–
Body–drain diode forward
V
DF
—
voltage
———————————————————————————————————————————–
Body–drain diode reverse
t
rr
—
recovery time
———————————————————————————————————————————–
610
—
pF
V
DS
= –10 V
315
—
pF
V
GS
= 0
95
—
pF
f = 1 MHz
12
—
ns
I
D
= –3 A
45
—
ns
V
GS
= –10 V
170
—
ns
R
L
= 10
90
—
ns
–1.1
—
V
I
F
= –5 A, V
GS
= 0
160
—
ns
IF= –5 A, V
GS
= 0,
diF / dt = 50 A / μs
2SJ245 L , 2SJ245 S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ245L | SILICON P-CHANNEL MOS FET |
| 2SJ245S | SILICON P-CHANNEL MOS FET |
| 2SJ246 | SILICON P-CHANNEL MOS FET |
| 2SJ246L | SILICON P-CHANNEL MOS FET |
| 2SJ247 | Silicon P-Channel MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ245(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-251AA |
| 2SJ245(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-252AA |
| 2SJ245L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON P-CHANNEL MOS FET |
| 2SJ245S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON P-CHANNEL MOS FET |
| 2SJ246 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON P-CHANNEL MOS FET |
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