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參數資料
| 型號： | 2SJ244 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場效應晶體管 |
| 文件頁數： | 2/8頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2SJ244 |
2SJ244
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
Pch*
2
–12
V
Gate to source voltage
±
7
±
2
±
4
V
Drain current
A
Drain peak current
A
Channel dissipation
1
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes: 1. PW
≤
100
μ
s, duty cycle
≤
10%
2. Value on the alumina ceramic board (12.5
×
20
×
0.7 mm)
3. Marking is “JY”.
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–12
—
—
V
I
D
= –1 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
7
—
—
V
I
G
=
±
10
μ
A, V
DS
= 0
Gate to source cutoff current
I
GSS
—
—
±
5
μ
A
μ
A
V
GS
=
±
6 V, V
DS
= 0
V
DS
= –8 V, V
GS
= 0
I
D
= –100
μ
A, V
DS
= –5 V
I
D
= –0.5 A*
1
, V
GS
= –2.5 V
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
–1
V
GS(off)
R
DS(on)1
–0.4
—
–1.4
V
Static drain to source on state
resistance
—
0.65
0.9
Static drain to source on state
resistance
R
DS(on)2
—
0.5
—
I
D
= –1 A*
1
, V
GS
= –4 V
Forward transfer admittance
|y
fs
|
Ciss
—
1.8
—
S
I
D
= –1 A*
1
, V
DS
= –5 V
V
DS
= –5 V, V
GS
= 0,
f = 1 MHz
Input capacitance
—
130
—
pF
Output capacitance
Coss
—
50
—
pF
Reverse transfer capacitance
Crss
—
260
—
pF
Turn-on delay time
t
(on)
t
(off)
V
DF
—
365
—
ns
I
D
= –0.2 A*
1
, Vin = –4 V,
R
L
= 51
I
F
= 4 A*
1
, V
GS
= 0
Turn-off delay time
—
1450
—
ns
Body to drain diode forward
voltage
Note:
1. Pulse test
—
—
7
V
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ245 | SILICON P-CHANNEL MOS FET |
| 2SJ245L | SILICON P-CHANNEL MOS FET |
| 2SJ245S | SILICON P-CHANNEL MOS FET |
| 2SJ246 | SILICON P-CHANNEL MOS FET |
| 2SJ246L | SILICON P-CHANNEL MOS FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ244JYTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ244JYTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ245 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON P-CHANNEL MOS FET |
| 2SJ245(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-251AA |
| 2SJ245(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-252AA |
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