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參數(shù)資料
| 型號： | 2SJ222 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2SJ222 |
2SJ222
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–100
—
—
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= –80 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –10 A, V
GS
= –10 V*
1
I
D
= –10 A, V
GS
= –4 V*
1
I
D
= –10 A, V
DS
= –10 V*
1
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
–250
V
GS(off)
R
DS(on)
–1.0
—
–2.0
V
Static drain to source on state
—
0.12
0.16
resistance
—
0.16
0.22
Forward transfer admittance
|y
fs
|
Ciss
7.5
12
—
S
Input capacitance
—
1800
—
pF
Output capacitance
Coss
—
680
—
pF
Reverse transfer capacitance
Crss
—
145
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
15
—
ns
I
D
= –10 A, V
GS
= –10 V,
R
L
= 3
Rise time
—
115
—
ns
Turn-off delay time
—
320
—
ns
Fall time
—
170
—
ns
Body to drain diode forward
voltage
—
–1.05
—
V
I
F
= –20 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
rr
—
280
—
ns
I
F
= –20 A, V
GS
= 0,
di
F
/dt = 50 A/
μ
s
See characteristic curves of 2SJ221
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| 2SJ245L | SILICON P-CHANNEL MOS FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ222-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ223L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-251VAR |
| 2SJ223S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-252VAR |
| 2SJ225 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ226 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
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