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參數(shù)資料
| 型號： | 2SD2623 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | For low-frequency amplification |
| 中文描述： | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 71K |
| 代理商： | 2SD2623 |
Transistors
2SD2623
Silicon NPN epitaxial planar type
1
Publication date: February 2003
SJC00284BED
For low-frequency amplification
■
Features
Low ON resistance R
on
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
25
V
Collector-emitter voltage (Base open)
20
V
Emitter-base voltage (Collector open)
V
EBO
12
V
Collector current
I
C
I
CP
0.5
A
Peak collector current
1
A
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
25 V, I
E
=
0
25
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
20
V
Emitter-base voltage (Collector open)
12
V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1, 2
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
I
CBO
100
nA
h
FE
V
CE
= 2 V, I
C
= 0.5 A
I
C
=
0.5 A, I
B
=
20 mA
I
C
=
0.5 A, I
B
=
50 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
200
800
V
CE(sat)
0.14
0.40
V
V
BE(sat)
1.2
V
Transition frequency
f
T
C
ob
200
MHz
Collector output capacitance
(Common base, input open circuited)
ON resistanse
*3
10
pF
R
on
1.0
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
2
±
0
1.3
±
0.1
0.3
+0.1
2.0
±
0.2
1
±
0
(
1
3
2
(0.65) (0.65)
0
±
0
0
±
0
0
0
+
–
0.15
+0.10
5
10
1 : Base
2 : Emitter
3 : Collector
EIAJ: SC-70
SMini3-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2: Rank classification
*3: R
on
Measuremet circuit
Rank
R
S
T
h
FE
200 to 350
300 to 500
400 to 800
V
V
1 k
R
on
=
V
B
×
1
000 (
)
A
V
B
f
=
0.3 V
V
=
V
B
I
B
=
1 mA
V
A
Marking Symbol: 2V
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