參數(shù)資料
型號(hào)： 2SD2401
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)
中文描述： 12 A, 150 V, NPN, Si, POWER TRANSISTOR
封裝： MT200, 3 PIN
文件頁數(shù)： 1/1頁
文件大?。?/td> 24K
代理商： 2SD2401
150
Darlington
2S D2401
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0
0
2
4
6
12
10
8
2
4
6
Collector-Emitter Voltage V
CE
(V)
C
C
(
1m
2.5mA
1.2mA
1.5mA
1.0mA
2.0mA
0.8mA
0.6mA
I
B
=0.4mA
02
0.5
1
5
1012
Collector Current I
C
(A)
D
F
(V
CE
=4V)
1000
5000
10000
40000
Typ
0.1
1
2
0.5
1
10
100
1000
5
50
500
2000
Time t(ms)
T
θ
j
(
0
12
8
10
2
4
6
0
2.6
2
1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
15CCsTm)
2CCeep
160
120
80
40
5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
10ms
10
50
5
3
100
200
150
0.05
0.1
1
0.5
10
30
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
DC
100ms
Without Heatsink
Natural Cooling
0
3
2
1
0.2
1
0.5
10
5
200
100
50
Base Current I
B
(mA)
C
C
(
I
C
=5A
I
C
=7A
I
C
=10A
(V
CE
=4V)
0.2
0.5
5
10 12
1
Collector Current I
C
(A)
D
F
1000
600
5000
10000
50000
70000
125C
25C
–30C
0
–0.1
–1
–10
20
40
100
80
60
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1570)
Application :
Audio, Series Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2401
160
150
5
12
1
150(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SD2401
100
max
100
max
150
min
5000
min
2.5
max
3.0
max
55
typ
95
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=160V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=7A
I
C
=7A, I
B
=7mA
I
C
=7A, I
B
=7mA
V
CE
=12V, I
E
=–2A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
External Dimensions
MT-200
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
70
R
L
(
)
10
I
C
(A)
7
V
(V)
–5
I
(mA)
–7
t
on
(
μ
s)
0.5typ
t
stg
(
μ
s)
10.0typ
t
f
(
μ
s)
1.1typ
I
(mA)
7
V
(V)
10
2
3
1.05
+0.2
-0.1
B
E
5.45
±0.1
5.45
±0.1
2-3.2
±0.1
36.4
±0.3
9
24.4
±0.2
7
2
±
2
4
0.65
+0.2
-0.1
3.0
+0.3
-0.1
6.0
±0.2
2.1
a
b
C
Weight : Approx 18.4g
a. Type No.
b. Lot No.
B
C
E
(70
)
Equivalent circuit
h
FE
Rank
O(5000to12000), P(6500to20000), Y(15000to30000)
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