參數(shù)資料
型號(hào)： 2SD2403GZ
廠商： NEC Corp.
英文描述： TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243
中文描述： 晶體管|晶體管|叩| 60V的五（巴西）總裁| 3A條一（c）|至243
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 137K
代理商： 2SD2403GZ
2002
Document No. D16156EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SD2403
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SD2403 is a transistor featuring high current
capacitance in small dimension. This transistor is ideal for
DC/DC converters and motor drivers.
FEATURES
High current capacitance
Low collector saturation voltage
Complementary transistor with 2SB1572
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
80
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
6.0
V
Collector current (DC)
I
C(DC)
3.0
A
Collector current (pulse)
I
C(pulse)
PW
≤
10 ms
duty cycle
≤
50 %
5.0
A
Base current (DC)
I
B(DC)
0.2
A
Base current (pulse)
I
B(pulse)
PW
≤
10 ms
duty cycle
≤
50 %
0.4
A
Total power dissipation
P
T
16 cm
2
×
0.7 mm ceramic board mounted
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
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2SD2403-T1-AZ-GZ 制造商:Renesas Electronics Corporation 功能描述:
2SD2406-Y(F) 功能描述:兩極晶體管 - BJT NPN 80V 2A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SD2406-YF 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 80V 4A 3-Pin(3+Tab) TO-220NIS
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